PART |
Description |
Maker |
NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK LASER MOD 670NM .95MW MVP ROUND LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
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ONSEMI[ON Semiconductor]
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MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package Receptacle With A Standard Tail Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
NTP85N03 NTB85N03 NTB85N03T4 |
Power MOSFET 85 Amps / 28 Volts Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|
NTMD6P02R2 NTMD6P02R2-D NTMD6P02 |
Power MOSFET 6 Amps, 20 Volts P?Channel SO, Dual(6A0V,双P沟道SO-8封装的功率MOSFET) Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
NTTD2P02R2-D NTTD2P02R2/D |
Power MOSFET -2.4 Amps-20 Volts Power MOSFET -2.4 Amps, -20 Volts Dual P-Channel Micro8
|
ON Semiconductor
|
MMDFS3P303 MMDFS3P303R2 MMDFS3P303-D |
Power MOSFET 3 Amps / 30 Volts Power MOSFET 3 Amps, 30 Volts P-Channel SO-8, FETKY
|
ONSEMI[ON Semiconductor]
|
MTD3055VL1 MTD3055VLT4 MTD3055VL MTD3055VL-D |
Power MOSFET 12 Amps, 60 Volts 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
1N60A |
0.5 Amps, 600 Volts N-CHANNEL MOSFET
|
UTC[Unisonic Technologies]
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